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Advanced Technical Information
HiPerFASTTM IGBT ISOPLUS247TM
VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE(sat) (Electrically Isolated Backside) tfi(typ)
= 600 V = 75 A = 2.5 V = 75 ns
(D1)
Symbol VCES VCGR VGES VGEM I C25 I C110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 W Clamped inductive load TC = 25C
Maximum Ratings 600 600 20 30 75 35 150 ICM = 80 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C
ISOPLUS 247 E153432
G
C
E
Isolated Backside*
G = Gate, E = Emitter
C = Collector
* Patent pending
Features
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DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Symbol Test Conditions Mounting torque (M3)
1.13/10Nm/lb.in. 5 g
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 40N60C 40N60CD1 40N60C 40N60CD1 40N60C 40N60CD1 40N60C 40N60CD1 600 600 2.5 2.5 5.0 5.0 200 650 1 3 100 2.5 V V V mA mA mA mA nA V
Applications
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Uninterruptible power supplies (UPS)
BVCES VGE(th) I CES
IC IC IC IC
= 250 mA, VGE = 0 V = 750 mA = 250 mA, VCE = VGE = 500 mA
Switched-mode and resonant-mode power supplies l AC motor speed control
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DC servo and robot drives DC choppers
VCE = 0.8 * VCES TJ = 25C VGE = 0 V; note 1 TJ = 25C
TJ = 125C TJ = 125C
Advantages
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Easy assembly High power density Very fast switching speeds for high frequency applications
98803 (01/01)
I GES VCE(sat)
VCE = 0 V, VGE = 20 V IC = IT, VGE = 15 V
(c) 2001 IXYS All rights reserved
IXGR 40N60C IXGR 40N60CD1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 40 3300 310 370 65 116 IC = IT, VGE = 15 V, VCE = 0.5 VCES 23 55 Inductive load, TJ = 25C IC = IT, VGE = 15 V VCE = 0.8 * VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IT, VGE = 15 V 25 30 100 75 0.85 25 35 40N60C 0.4 VCE = 0.8 * VCES, RG = Roff = 4.7 W 40N60CD1 1.2 Remarks: Switching times may increase for 150 VCE (Clamp) > 0.8 * VCES, higher TJ or 105 increased RG 1.2 150 150 1.70 S pF pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ mJ ns ns mJ 0.6 K/W 0.15 K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection
ISOPLUS 247 OUTLINE
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IT; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 %
VCE = 25 V, VGE
40N60C = 0 V, f = 1 MHz 40N60CD1
Reverse Diode (FRED) (IXGH40N60CD1 only) Characteristic Values (TJ = 25C, unless otherwise specified) Symbol Test Conditions min. typ. max. VF IRM t rr RthJC I F = IT, VGE = 0 V, Note 1 I F = IT, VGE = 0 V, VR = 100 V -diF/dt = 100 A/ms TJ = 150C TJ = 25C TJ = 100C 3.5 1.3 1.8 7.5 V V A ns 0.90 K/W
I F = 1 A; -di/dt = 100 A/ms; VR = 30 V
Note: 1. Pulse test, tp 300 ms, duty cycle:d 2 % 2. IT = 40A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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